Intense precipitation expected worldwide
Scientists at the National Center for Atmospheric Research in Boulder, Colo., say global warming will produce more intense precipitation around the world.
Oct 13, 2005
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U.S. may lose its global lead in science
The Washington-based National Academies, the nation's leading science advisory group, is warning the United States may lose its global lead in science.
Oct 13, 2005
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2005 may end as the hottest year on record
U.S. climatologists at Columbia University in New York say international climate data indicate 2005 may become the hottest year on record.
Oct 13, 2005
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Scientific MorphBank to be expanded
A Florida State University researcher is leading an effort to expand MorphBank -- a method for scientists to store, share and study plant or animal images.
Oct 13, 2005
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Study: link between tropical warming and greenhouse gases stronger than ever
New evidence from climate records of the past provides some of the strongest indications yet of a direct link between tropical warmth and higher greenhouse gas levels, say scientists at the University of California, Santa ...
Oct 13, 2005
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Microfluidics may be a new method of IVF
University of Michigan technology more closely mirroring natural fertilization process is showing promise as a new method of in-vitro fertilization.
Oct 13, 2005
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No-till farming may reduce global warming
A University of Illinois at Urbana-Champaign study suggests no-till farming might reduce the effects of global warming.
Oct 13, 2005
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Aussie banks likely to handle Telstra sale
Australia will likely turn to panels of bankers to manage the government's divestiture of its $20 billion stake in telecom giant Telstra.
Oct 13, 2005
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Venus Express nears its launch date
The European Space Agency's Venus Express spacecraft was attached to a Soyuz-Fregat upper-stage rocket this week in preparation for an Oct. 26 launch.
Oct 13, 2005
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Samsung Develops World's First 512-Megabit DDR2 with 70nm Process Technology
Samsung Electronics announced that it has completed development of the world-first 512-Megabit (Mb) DDR2 SDRAM using 70-nanometer process, the smallest process technology yet applied to a DRAM device.
Oct 13, 2005
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